 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications Unit: mm * * * * * The 3rd generation Enhancement-mode High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 1200 20 15 30 15 30 160 150 -55 to 150 Unit V V A JEDEC A 2-16H1A JEITA TOSHIBA Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range W C C Weight: 3.65 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-10-29 GT15Q311 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) tf toff VF trr Rth (j-c) Rth (j-c) IF = 15 A, VGE = 0 IF = 15 A, di/dt = -200 A/s Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Inductive load VCC = 600 V, IC = 15 A VGG = 15 V, RG = 56 (Note) 0.16 0.56 0.40 3.0 350 0.78 1.60 V ns C/W C/W Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1.5 mA, VCE = 5 V IC = 15 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Min 4.0 Typ. 2.1 950 0.05 0.12 Max 500 1.0 7.0 2.7 s Unit nA mA V V pF Note: Switching time measurement circuit and input/output waveforms VGE RG -VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% 2 2002-10-29 GT15Q311 IC - VCE 50 Common emitter Tc = 25C 20 Common emitter VCE - VGE (V) Tc = -40C 16 (A) IC 30 15 10 Collector-emitter voltage 20 VCE 40 12 Collector current 30 8 15 4 IC = 6 A 20 VGE = 9 V 10 0 0 1 2 3 4 5 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter 20 Common emitter Tc = 25C 16 VCE - VGE (V) (V) Tc = 125C 16 VCE Collector-emitter voltage 12 Collector-emitter voltage VCE 30 12 8 8 30 4 IC = 6 A 15 4 15 IC = 6 A 0 0 ) 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 50 Common emitter 4 Common emitter VCE (sat) - Tc 30 Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V (A) 40 VGE = 15 V 3 IC 30 15 2 Collector current IC = 6 A 20 25 10 Tc = 125C 0 0 -40 1 4 8 12 16 20 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-10-29 GT15Q311 Switching Time ton, tr - RG 1 Common emitter VCC = 600 V VGG = 15 V IC = 15 A : Tc = 25C : Tc = 125C 1 Switching Time ton, tr - IC Common emitter VCC = 600 V VGG = 15 V RG = 56 : Tc = 25C : Tc = 125C ton 0.1 tr 0.03 0.5 (s) 0.3 (s) Switching time 300 500 tr 0.3 ton, tr Switching time 0.1 0.05 0.03 0.01 3 ton, tr 0.01 0 ton 5 10 30 50 100 5 10 15 20 Gate resistance RG () Collector current IC (A) Switching Time toff, tf - RG 3 Common emitter VCC = 600 V VGG = 15 V IC = 15 A : Tc = 25C : Tc = 125C 3 Switching Time toff, tf - IC Common emitter VCC = 600 V VGG = 15 V RG = 56 : Tc = 25C : Tc = 125C toff (s) 1 0.5 0.3 toff (s) 1 toff, tf Switching time Switching time toff, tf tf 0.3 tf 0.1 0.05 0.03 3 0.1 5 10 30 50 100 300 500 0.05 0 5 10 15 20 Gate resistance RG () Collector current IC (A) Switching Loss Eon, Eoff - RG 10 5 3 Common emitter VCC = 600 V VGG = 15 V IC = 15 A : Tc = 25C : Tc = 125C 10 Switching Loss Eon, Eoff - IC Common emitter VCC = 600 V VGG = 15 V RG = 56 : Tc = 25C : Tc = 125C Eon, Eoff (mJ) Eon, Eoff (mJ) Switching loss Eon Eoff 3 1 0.5 0.3 1 Switching loss Eoff 0.3 Eon 0.1 3 5 10 30 50 100 300 500 0.1 0 5 10 15 20 Gate resistance RG () Collector current IC (A) 4 2002-10-29 GT15Q311 C - VCE 3000 1000 VCE, VGE - QG Common emitter RL = 40 Tc = 25C 20 (V) (pF) 1000 VCE Cies 800 16 Collector-emitter voltage 300 600 600 400 400 12 100 Coes VCE = 200 V 8 30 Common emitter VGE = 0 f = 1 MHz Tc = 25C 3 10 30 100 200 4 Cres 300 1000 10 1 0 0 40 80 120 160 0 200 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF - VF 50 Common collector 100 trr, Irr - IF 1000 (A) 40 (A) Reverse recovery current Irr trr Forward current IF 30 10 Irr 100 25 20 Tc = 125C 10 -40 3 Common collector di/dt = -200 A/s VGE = 0 : Tc = 25C : Tc = 125C 5 10 15 0 0 1 2 3 4 5 1 0 10 20 Forward voltage VF (V) Forward current IF (A) Safe Operating Area 100 50 30 IC max (pulsed)* IC max (continuous) 10 5 3 10 ms* *: Single nonrepetitive pulse Tc = 25C Curves must be 0.5 derated linearly with 0.3 increase in temperature. 1 0.1 1 3 10 30 100 300 1000 3000 DC operation 100 50 Reverse Bias SOA (A) 100 s* 1 ms* (A) 50 s* 30 IC IC 10 5 3 Collector current Collector current 1 0.5 0.3 Tj 125C VGE = 15 V RG = 56 3 10 30 100 300 1000 3000 0.1 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 2002-10-29 Reverse recovery time trr 30 (ns) VGE = 0 Gate-emitter voltage VCE Capacitance C (V) GT15Q311 rth (t) - tw 102 Tc = 25C 101 Diode stage 100 IGBT stage 10 -1 Transient thermal resistance rth (t) (C/W) 10-2 10-3 10-4 -5 10 10-4 10-3 10-2 10-1 100 101 102 Pulse width tw (s) 6 2002-10-29 GT15Q311 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2002-10-29 |
Price & Availability of GT15Q311
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |